IRFZ44N / IRF 5303N MOSFET N-Channel

IRFZ44N MOSFET N-Channel -Type of Transistor: MOSFET -Type of Control Channel: N -Channel -Maximum Power Dissipation (Pd): 83 W -Maximum Drain-Source Voltage |Vds|: 55 V -Maximum Gate-Source Voltage |Vgs|: 10 V -Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V -Maximum Drain Current |Id|: 41 A -Maximum Junction Temperature (Tj): 150 °C -Total Gate Charge (Qg): 62 nC -Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm -Package: TO220AB The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Fully Avalanche Rated